博士論文

結晶成長及びプロセスにより導入されるワイドバンドギャップ半導体GaN及びSiC中の深い準位

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結晶成長及びプロセスにより導入されるワイドバンドギャップ半導体GaN及びSiC中の深い準位

Material type
博士論文
Author
鐘ケ江, 一孝
Publisher
Kyoto University
Publication date
2022-03-23
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
京都大学,博士(工学),Doctor of Philosophy (Engineering)
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Notes on use

Note (General):

付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」

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  • Kyoto University Research Information Repository

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Digital

Material Type
博士論文
Author/Editor
鐘ケ江, 一孝
Author Heading
鐘ケ江, 一孝 カネガエ, カズタカ
Publication, Distribution, etc.
Publication Date
2022-03-23
Publication Date (W3CDTF)
2022-03-23
Alternative Title
Growth and Process-Induced Deep Levels in Wide Bandgap Semiconductor GaN and SiC
Contributor
木本, 恒暢
川上, 養一
安藤, 裕一郎
Degree grantor/type
京都大学