Jump to main content
博士論文

結晶成長及びプロセスにより導入されるワイドバンドギャップ半導体GaN及びSiC中の深い準位

Icons representing 博士論文

結晶成長及びプロセスにより導入されるワイドバンドギャップ半導体GaN及びSiC中の深い準位

Material type
博士論文
Author
鐘ケ江, 一孝
Publisher
Kyoto University
Publication date
2022-03-23
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
京都大学,博士(工学),Doctor of Philosophy (Engineering)
View All

Notes on use

Note (General):

付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

  • Kyoto University Research Information Repository

    Digital
    You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type
博士論文
Author/Editor
鐘ケ江, 一孝
Author Heading
鐘ケ江, 一孝 カネガエ, カズタカ
Publication, Distribution, etc.
Publication Date
2022-03-23
Publication Date (W3CDTF)
2022-03-23
Alternative Title
Growth and Process-Induced Deep Levels in Wide Bandgap Semiconductor GaN and SiC
Contributor
木本, 恒暢
川上, 養一
安藤, 裕一郎
Degree grantor/type
京都大学