Evaporation-rate and substrate-temperature dependence of direct exciton transitions in BiI3 thin films formed by hot-wall technique on Al2O3 substrates

Material type: 文書・図像類

Author: 有嶋, 駿士郎ほか

Publisher: Wiley

Publication date: 2018-08-16

Material Format: Digital

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NDC: 421.3

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Note (General)：: Using a hot-wall technique, BiI3 thin films were deposited on alpha-Al2O3 substrates at different evaporation rates and substrate temperatures in orde...

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Material Type: 文書・図像類
Title: Evaporation-rate and substrate-temperature dependence of direct exciton transitions in BiI3 thin films formed by hot-wall technique on Al2O3 substrates
Author/Editor: 有嶋, 駿士郎
村田, 康樹
坂本, 隆太
上田, 智博
市川, 聡夫
岩満, 一功
赤井, 一郎
Author Heading: 有嶋, 駿士郎アリシマ, シュンシロウ
村田, 康樹ムラタ, コウキ
坂本, 隆太サカモト, リュウタ
上田, 智博ウエダ, トモヒロ
市川, 聡夫イチカワ, フサオ
岩満, 一功イワミツ, カズノリ
赤井, 一郎アカイ, イチロウ
Publication, Distribution, etc.: Wiley
Publication Date: 2018-08-16
Publication Date (W3CDTF): 2018-08-16
Periodical title: Physica Status Solidi B
No. or year of volume/issue: 255 11
Volume: 255
Issue: 11
Pages: 1800092-1-1800092-9
ISSN (Periodical Title): PISSN : 0370-1972
Text Language Code: eng
Subject Heading: BiI3
exciton
hot-wall technique
inner exciton
interface exciton
NDC: 421.3
Target Audience: 一般
Note (General): Using a hot-wall technique, BiI3 thin films were deposited on alpha-Al2O3 substrates at different evaporation rates and substrate temperatures in order to optimize these conditions. From X-ray diffraction data, it was confirmed that BiI3 layers were regularly stacked. Absorption due to direct excitons in BiI3 was observed in the deposited thin films. To study the translational symmetry and homogeneity of the films, changes in direct exciton transitions were examined. Direct excitons could be split into inner X^Inner and interface X^Inner excitons due to a collapse of translational symmetry along the stacking direction for a finite thickness, and the mean value hat-E and the energy difference Delta-E for the transition energies for these excitons were obtained. To evaluate the sample quality, the dependence of hat-E and Delta-E on the deposition conditions was investigated based on a tight-binding model for flake-like crystals consisting of a finite number n of BiI3 layers. In this model, a site shift energy delta was introduced for the interfaced BiI3 layers, which represents the difference of the on-site energy for the excitons. From the magnitude of Delta-E, the BiI3 thin films are considered to consist of packed flake-like crystals, whose translational symmetry will be maintained within four or five (n=4 or 5) BiI3 layers. From the variations of delta, it was found that an evaporation rate of about 0.8 AA/s and a substrate temperature of 75C are the best conditions for BiI3 thin film deposition on alpha-Al2O3 substrates.
Access Restrictions: 限定公開
Rights (production): (C) 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Is Version Of (DOI): 10.1002/pssb.201800092
http://hdl.handle.net/2298/43202
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 熊本大学 : 熊本大学学術リポジトリ