強誘電体薄膜を用いたReRAM型高機能不揮発メモリの開発と機構解明

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Author: 森本, 章治ほか

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Publication date: 2016-06-01

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Note (General)：: 金沢大学理工学域電子情報学系NdをドープしたBiFeO3(BNF)強誘電体を用いた抵抗変化メモリ素子（Fe-ReRAM）の作製と評価を行った。リーク電流に影響されない特殊なパルス測定法（PUND）法を用いて強誘電特性を評価した結果、作製した試料の抵抗変化は主に強誘電体の自発分極に基づくことを確認し...

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Material Type: 文書・図像類
Title: 強誘電体薄膜を用いたReRAM型高機能不揮発メモリの開発と機構解明
Author/Editor: 森本, 章治
Morimoto, Akiharu
Author Heading: 森本, 章治
Morimoto, Akiharu
Publication Date: 2016-06-01
Publication Date (W3CDTF): 2016-06-01
Alternative Title: Development of nonvolatile Fe-ReRAM and study on the operation mechanism
Periodical title: 平成27(2015)年度科学研究費補助金特定領域研究研究成果報告書 = 2015 Fiscal Year Final Research Report
No. or year of volume/issue: 2014-04-01 – 2016-03-31
Volume: 2014-04-01 – 2016-03-31
Pages: 6p.-
Text Language Code: jpn
Subject Heading: 強誘電体
不揮発メモリ
抵抗変化型メモリ
希土類添加ビスマス鉄酸化物
書き込み
読み出し
保持特性
疲労特性
Target Audience: 一般
Note (General): 金沢大学理工学域電子情報学系
NdをドープしたBiFeO3(BNF)強誘電体を用いた抵抗変化メモリ素子（Fe-ReRAM）の作製と評価を行った。リーク電流に影響されない特殊なパルス測定法（PUND）法を用いて強誘電特性を評価した結果、作製した試料の抵抗変化は主に強誘電体の自発分極に基づくことを確認した。作製した試料は30μsの書き込み時間でも約1000のON/OFF比を達成しており、書き込み時間のさらなる高速化が期待できる。保持特性及び疲労特性の結果より1万秒の保持時間、10万回の疲労サイクルにおいてON/OFF比が維持されていることを確認した。
Nd-doped BiFeO3(BNF) ferroelectric films were deposited and a novel ReRAMs　(Fe-ReRAMs) were fabricated.The maximum ON/OFF ratio of the leakage current was around 1000. Moreover, the observed resistive switching behavior is ascribed to ferroelectric polarization since the leakage current was changed by ferroelectric polarization direction and their value. Fabricated Fe-ReRAM was found to achieve the ON/OFF ratio of the leakage current around 1000 even by the writing time of 30 μs. In general, ferroelectric polarization reversal is known to have a switching speed of the order of nanoseconds when the memory capacitor is reduced to submicron size. Therefore, the Fe-ReRAM is expected to have a switching speed of the order of nanoseconds. Moreover, the present ReRAM showed a retention time of 10,000 s and a fatigue endurance of 100,000 cycles. At present, these properties are not sufficient to application to the next generation memory and a further improvements are required.
研究課題/領域番号:26630126,研究期間(年度):2014-04-01 – 2016-03-31
DOI: 10.24517/00034445
Source: https://kanazawa-u.repo.nii.ac.jp/?action=repository_action_common_download&item_id=34458&item_no=1&attribute_id=26&file_no=1
https://kanazawa-u.repo.nii.ac.jp/?action=repository_action_common_download&item_id=34458&item_no=1&attribute_id=26&file_no=1
Access Restrictions: 限定公開
Rights (production): CC BY-NC-ND
Related Material: https://kaken.nii.ac.jp/search/?qm=60143880
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26630126/
https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-26630126/26630126seika/
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 金沢大学 : 金沢大学学術情報リポジトリKURA