透過型半導体空間光変調パネルの高性能化・高機能化

• Material Type: 文書・図像類
• Title: 透過型半導体空間光変調パネルの高性能化・高機能化
• Author/Editor: 桑村, 有司; Kuwamura, Yuji
• Author Heading: 桑村, 有司; Kuwamura, Yuji
• Publication, Distribution, etc.: 金沢大学理工研究域電子情報通信学系
• Publication Date: 2003-03
• Publication Date (W3CDTF): 2003-03
• Alternative Title: Integration of A Semiconductor Optical Modulator for Parallel Information
• Periodical title: 平成14(2002)年度 科学研究費補助金 基盤研究(C) 研究成果報告書 = 2002 Fiscal Year Final Research Report
• No. or year of volume/issue: 2001-2002
• Volume: 2001-2002
• Pages: 5p.-
• Text Language Code: jpn
• Subject Heading: 光変調器; 平面型光変調器; 空間光変調器; スマートピクセル; 並列光情報処理; 光コンピュータ; semiconductor optical modulators; planar optical modulators; spatial light modulators; smart pixcel; parallel optical information processing; optical computer
• Target Audience: 一般
• Note (General): 並列光情報処理はその構想ができてから久しいが,実用化には至っていない.一番の理由は論理演算に用いる空間光変調パネルが存在しないことであり,低電圧で高速に動作する光透過型でかつ平面型の光変調器の開発が望まれている.我々は,pin接合を数十対多層に積み重ねて横方向から電圧を印加する独自の構造の平面型光変調器を提案し,素子試作を行ってきた.消光比10dB(電圧7.5V),挿入損8dB,速度1.2MHzの特性が実現してきたが,本研究では更なる高性能化を目指して研究を行った.平成13,14年度において,1)動作速度の高速化,2)挿入損の低減,3)低消費電力,4)大規模集積化(1000×1000)等の目標を掲げ,下記の成果が得られた.1)高速化:素子寸法を60μm角程度まで小型化することで,素子容量を減らし,動作速度を120MHzまで高速化することができた.2)挿入損:素子構造の一部改良により,挿入損4dBを実現した.3)低電力:pin接合の逆方向耐電圧が低いことが問題であったため,原因について調査した.p型不純物として利用したZn原子の拡散が低い耐電圧の原因であることが判明し,その対策法を考案した.4)大規模集積化:1000×1000の集積化は実現できなかったが,微細加工技術及びプロセス技術の改善や多数の画素への電気配線の方法などを検討し,大規模集積化に向けての基礎技術を開発した.; The parallel, optical information processing has not arrived at practical use after being able to do the plan though it is long. As for the best reason, the space light modulation panel used for the logical operation does not exist, and a transmission-type planar-illuminated optical modulator operated at alow voltage and a high speed needs to be developed. We have proposed an original planar optical modulator based on electron depletion near pin junctions which impresses the voltage from horizontal direction, and have made the element for trial purposes. A further making to high performance was researched in this research aiming though the characteristic of the extinct ratio 10dB(7.5V in the voltage) and the insertion loss 8dB and 1.2MHz at the speed had been achieved. In 2001 and 2002 years, the targets such as 1) the speed-up of operation speed, 2) the decrease of insertion-loss, 3) low power consumption and 4) making to the large-scale integration (1000 × 1000) were set, and the following results were achieved.1) Speed-up : The capacity of the element was decreased by miniaturizing the size of the element to 60μm corner level, and operation speed was able to be sped up to 120MHz.2) Insertion loss : The insertion-loss 4 dB was achieved by partially improving the element structure.3) Low electric power : Because it was a problem that the breakdown voltage for the reverse voltage in the pin junction was low, the cause was investigated. It turned out that the diffusion of the Zn atom used as p type impurities was a cause for low breakdown voltage, and designed the measures.4) Large-scale integration : The method of the electric wiring to the improvement of the microfabrication technology and the process technology and a lot of pixels etc. were examined, and the basic technology for making to the large-scale integration was developed though the integration of 1000×1000 was not able to be achieved.; 研究課題/領域番号:13650040, 研究期間(年度):2001-2002; 出典：「透過型半導体空間光変調パネルの高性能化・高機能化」研究成果報告書 課題番号13650040 (KAKEN：科学研究費助成事業データベース（国立情報学研究所）) 本文データは著者版報告書より作成
• DOI: 10.24517/00053971
• Access Restrictions: 限定公開
• Related Material: https://kaken.nii.ac.jp/search/?qm=10195612; https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650040/; https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-13650040/136500402002kenkyu_seika_hokoku_gaiyo/
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 金沢大学 : 金沢大学学術情報リポジトリKURA