NTD-Si製造技術に係るシリコンインゴット試料の照射試験

Material type: 文書・図像類

Author: 竹本紀之ほか

Publisher: -

Publication date: 2015-08

Material Format: Digital

Capacity, size, etc.: -

NDC: -

View All

Notes on use

Note (General)：: Silicon semiconductor production by neutron transmutation doping (NTD) method using the JMTR has been investigated in Neutron Irradiation and Testing ...

Detailed bibliographic record

Summary, etc.：: Silicon semiconductor production by neutron transmutation doping (NTD) method using the JMTR has been investigated in Neutron Irradiation and Testing ...

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

List of Cooperating Institutions and Databases

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

JOPSS:JAEA Originated Papers Searching System
Digital
You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).
JOPSS:JAEA Originated Papers Searching System

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type: 文書・図像類
Title: NTD-Si製造技術に係るシリコンインゴット試料の照射試験
Author/Editor: 竹本紀之
Romanova, N.
木村伸明
Gizatulin, S.
斎藤隆
Martyushov, A.
Nakipov, D.
土谷邦彦
Chakrov, P.
Author Heading: 竹本紀之
Romanova, N.
木村伸明
Gizatulin, S.
斎藤隆
Martyushov, A.
Nakipov, D.
土谷邦彦
Chakrov, P.
Publication Date: 2015-08
Publication Date (W3CDTF): 2015-08
Alternative Title: Irradiation test with silicon ingot for NTD-Si irradiation technology
Periodical title: JAEA-Technology 2015-021
Text Language Code: eng
Target Audience: 一般
Note (General): Silicon semiconductor production by neutron transmutation doping (NTD) method using the JMTR has been investigated in Neutron Irradiation and Testing Reactor Center, Japan Atomic Energy Agency in order to expand the industry use. As a part of investigations, irradiation test with a silicon ingot was planned using WWR-K in Institute of Nuclear Physics, Republic of Kazakhstan. A device rotating the ingot made with the silicon was fabricated and was installed in the WWR-K for the irradiation test. And that, a preliminary irradiation test was carried out using neutron fluence monitors to evaluate the neutronic irradiation field. Based on the result, two silicon ingots were irradiated as scheduled, and the resistivity of each irradiated silicon ingot was measured to confirm the applicability of high-quality silicon semiconductor by the NTD method (NTD-Si) to its commercial production.
日本原子力研究開発機構・照射試験炉センターでは、産業利用拡大の観点からJMTRを活用した中性子核変換ドーピング(Neutron Transmutation Doping: NTD)法によるシリコン半導体製造を検討している。この検討の一環として、カザフスタン共和国核物理研究所(INP)との原子力科学分野における研究開発協力のための実施取決め(試験研究炉に関する原子力技術)のもとで、INPが有するWWR-K炉を用いたシリコンインゴット試料の照射試験を行うこととした。まず、シリコン回転装置を製作してWWR-K炉に設置するとともに、シリコンインゴット試料の照射位置における中性子照射場の評価を行うため、フルエンスモニタを用いた予備照射試験を行った。次に、予備照射試験結果に基づき、2本のシリコンインゴット試料の照射試験を行うとともに、照射後の試料の抵抗率等を測定し、試験研究炉を用いた高品位シリコン半導体製造の商用生産への適用性について評価を行った。
Source: /JAEA-Technology-2015-021.pdf （fulltext）
https://jopss.jaea.go.jp/pdfdata/JAEA-Technology-2015-021.pdf
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 日本原子力研究開発機構 : JOPSS:JAEA Originated Papers Searching System