In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

Material type: 文書・図像類

Author: 木下, 恭一ほか

Publisher: 宇宙航空研究開発機構

Publication date: 2005-03-31

Material Format: Digital

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Note (General)：: The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a m...

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Material Type: 文書・図像類
Title: In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
Author/Editor: 木下, 恭一
緒方, 康行
足立, 聡
越川, 尚清
鶴, 哲也
宮田, 浩旭
村松, 祐治
依田, 真一
Kinoshita, Kyoichi
Ogata, Yasuyuki
Adachi, Satoshi
Koshikawa, Naokiyo
Tsuru, Tetsuya
Miyata, Hiroaki
Muramatsu, Yuji
Yoda, Shinichi
Author Heading: 木下, 恭一
緒方, 康行
足立, 聡
越川, 尚清
鶴, 哲也
宮田, 浩旭
村松, 祐治
依田, 真一
Kinoshita, Kyoichi
Ogata, Yasuyuki
Adachi, Satoshi
Koshikawa, Naokiyo
Tsuru, Tetsuya
Miyata, Hiroaki
Muramatsu, Yuji
Yoda, Shinichi
Publication, Distribution, etc.: 宇宙航空研究開発機構
Publication Date: 2005-03-31
Publication Date (W3CDTF): 2005-03-31
Alternative Title: Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長
Periodical title: 宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
No. or year of volume/issue: JAXA-RR-04-022E
Volume: JAXA-RR-04-022E
Pages: 14-20
ISSN (Periodical Title): ISSN : 1349-1113
Text Language Code: eng
Subject Heading: 結晶成長
飽和溶融帯移動法
結晶化
砒素化合物
液相線
1方向凝固
重力条件
レーザダイオード
インジウムガリウム砒素
対流
成長モデル
板状結晶
溶液ゾーン
crystal growth
traveling liquidus-zone method
crystallization
arsenic compound
liquidus
directional solidification
gravity condition
laser diode
indium gallium arsenide
convection
growth model
plate crystal
solution zone
Target Audience: 一般
Note (General): The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here.
資料番号: AA0048451002
レポート番号: JAXA-RR-04-022E
Access Restrictions: 限定公開
Periodical Title (NCID): AA1192675X
https://ci.nii.ac.jp/ncid/AA1192675X
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ