In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

• Material Type: 文書・図像類
• Title: In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
• Author/Editor: 木下, 恭一; 緒方, 康行; 足立, 聡; 越川, 尚清; 鶴, 哲也; 宮田, 浩旭; 村松, 祐治; 依田, 真一; Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; Koshikawa, Naokiyo; Tsuru, Tetsuya; Miyata, Hiroaki; Muramatsu, Yuji; Yoda, Shinichi
• Author Heading: 木下, 恭一; 緒方, 康行; 足立, 聡; 越川, 尚清; 鶴, 哲也; 宮田, 浩旭; 村松, 祐治; 依田, 真一; Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; Koshikawa, Naokiyo; Tsuru, Tetsuya; Miyata, Hiroaki; Muramatsu, Yuji; Yoda, Shinichi
• Publication, Distribution, etc.: 宇宙航空研究開発機構
• Publication Date: 2005-03-31
• Publication Date (W3CDTF): 2005-03-31
• Alternative Title: Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長
• Periodical title: 宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
• No. or year of volume/issue: JAXA-RR-04-022E
• Volume: JAXA-RR-04-022E
• Pages: 14-20
• ISSN (Periodical Title): ISSN : 1349-1113
• Text Language Code: eng
• Subject Heading: 結晶成長; 飽和溶融帯移動法; 結晶化; 砒素化合物; 液相線; 1方向凝固; 重力条件; レーザダイオード; インジウムガリウム砒素; 対流; 成長モデル; 板状結晶; 溶液ゾーン; crystal growth; traveling liquidus-zone method; crystallization; arsenic compound; liquidus; directional solidification; gravity condition; laser diode; indium gallium arsenide; convection; growth model; plate crystal; solution zone
• Target Audience: 一般
• Note (General): The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here.; 資料番号: AA0048451002; レポート番号: JAXA-RR-04-022E
• Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=2364&item_no=1&attribute_id=31&file_no=1
• Access Restrictions: 限定公開
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ