MDS-1(つばさ)搭載民生用メモリ素子のシングルイベント効果に関する解析結果

Material type: 規格・テクニカルリポート類

Author: 池田, 直美ほか

Publisher: 宇宙航空研究開発機構

Publication date: 2004-02-04

Material Format: Digital

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Note (General)：: 出版タイプ： NASeven kinds of COTS memories were installed in Commercial Semiconductor Devices (CSD) and their single event effects were observed. Single Ev...

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Material Type: 規格・テクニカルリポート類
Title: MDS-1(つばさ)搭載民生用メモリ素子のシングルイベント効果に関する解析結果
Author/Editor: 池田, 直美
新藤, 浩之
飯出, 芳弥
浅井, 弘彰
久保山, 智司
松田, 純夫
Ikeda, Naomi
Shindo, Hiroyuki
Iide, Yoshiya
Asai, Hiroaki
Kuboyama, Satoshi
Matsuda, Sumio
Author Heading: Ikeda, Naomi
Shindo, Hiroyuki
Iide, Yoshiya
Asai, Hiroaki
Kuboyama, Satoshi
Matsuda, Sumio
Publication, Distribution, etc.: 宇宙航空研究開発機構
Publication Date: 2004-02-04
Publication Date (W3CDTF): 2004
Alternative Title: Analysis results of single event effects on COTS memories by MDS-1
Periodical title: 宇宙航空研究開発機構研究開発資料: 民生部品・コンポーネント実証衛星つばさ:MDS-1軌道上実証成果報告書 = JAXA Research and Development Memorandum: Report of Flight Demonstration Results of the Mission Demonstration Test Satellite-1 (MDS-1; TSUBASA)
No. or year of volume/issue: JAXA-RM-03-022
Volume: JAXA-RM-03-022
Pages: 518-521
ISSN (Periodical Title): ISSN : 1349-1121
Subject Heading: 航空宇宙環境
宇宙機設計
つばさ
シングルイベントアップセット
宇宙線
マルチビットアップセット
民生用半導体部品実験装置
放射線損傷
aerospace environment
spacecraft design
Tsubasa
single event upset
cosmic ray
multi-bit upset
commercial semiconductor device
radiation damage
Target Audience: 一般
Note (General): 出版タイプ： NA
Seven kinds of COTS memories were installed in Commercial Semiconductor Devices (CSD) and their single event effects were observed. Single Event Upset (SEU) and Multi-Bit Upset (MBU) were observed in DRAMs and SRAMs, and no Single Event Latchup (SEL) was observed in all memories. The results showed that most of SEU and MBU was caused by protons in Van Allen belt, and that the number of MBU was considerably large to neglect. They also showed that some of the on-orbit data were not consistent with the results obtained from the ground test. This implies that the structure of recent memories have become too small to predict accurate SEU rate by present model.
資料番号: AA0046975005
レポート番号: JAXA-RM-03-022
Periodical Title (NCID): AA11983593
https://ci.nii.ac.jp/ncid/AA11983593
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ