Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals

• Material Type: 文書・図像類
• Title: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals
• Author/Editor: 宇宙航空研究開発機構; Japan Aerospace Exploration Agency
• Author Heading: 宇宙航空研究開発機構; Japan Aerospace Exploration Agency
• Publication, Distribution, etc.: 宇宙航空研究開発機構
• Publication Date: 2006-03-31
• Publication Date (W3CDTF): 2006-03-31
• Periodical title: 宇宙航空研究開発機構特別資料 = JAXA Special Publication
• No. or year of volume/issue: JAXA-SP-05-036E
• Volume: JAXA-SP-05-036E
• ISSN (Periodical Title): ISSN : 1349-113X
• Text Language Code: eng
• Subject Heading: InGaAs; 光通信; 飽和溶融帯移動法; フォトルミネッセンス; 気相エピタキシー; 結晶成長; 単結晶; 多結晶; 多結晶化; optical communication; traveling liquidus zone method; photoluminescence; vapor phase epitaxy; crystal growth; single crystal; polycrystal; polycrystallization
• Target Audience: 一般
• Note (General): For growing compositionally homogeneous alloy crystals, mass balance between segregation and transportation at the growth interface is required, that is, just the same amount of rejected solute by segregation should be transported away from the interface. However, direct control of the transport rate is impossible and this uncontrollability makes compositionally homogeneous crystal growth extremely difficult. Objectives of this research are to invent a new method for growing compositionally homogeneous alloy crystals that can control the mass transport rate at the growth interface directly and can avoid the effects of residual acceleration and g-jitter on the crystal growth from a melt and to apply the new method to the growth of alloy crystals such as In(0.3)Ga(0.7)As and to verify the feasibility of the new method. In(0.3)Ga(0.7)As is promising as a substrate for laser diodes for 1.3 micrometer wavelength but its large homogeneous single crystals have never been obtained on the ground. We developed a one-dimensional model for the TLZ (Traveling Liquidus-Zone) growth and proposed microgravity experiments in 2001 in order to verify our TLZ growth model by the crystal growth in the convection suppressed conditions. The proposed theme to the 1st International Announcement of Opportunity (IAO) for microgravity science research 'Growth of Homogeneous In(0.3)Ga(0.7)As Single Crystals in Microgravity' has been selected as one of candidates for the ISS experiments by the microgravity science committee of Japan after International peer review in Jan. 2002. In the 2003 fiscal year, we further developed the TLZ method on the ground since experiments on board the ISS have been postponed. Laser diodes on In(0.3)Ga(0.7)As substrates are expected excellent stability of the output power on temperature and we obtained funds from NEDO (New Energy and Industrial Technology Development Organization) for developing such laser diodes used in the optical communication system. Platy crystals were grown for substrate use on the ground because they have large area and convection in a melt during crystal growth is suppressed by their limited thickness even on the ground. Compositionally uniform platy crystals having compositions In(0.1)Ga(0.9)As, In(0.2)Ga(0.8)As, and In(0.3)Ga(0.7)As with single crystal area larger than 10 x 30 sq mm and 2 mm thickness have successfully been grown. Using these substrates laser diode fabrication was carried out in 2005 fiscal year in collaboration with NTT Photonics Laboratories and sharp photoluminescence at 1.3 micrometer from MQW (multi-quantum well) layers was observed. Thus, the basis for lasing has been established. In this brochure, we report results of our activities in the 2005 fiscal year.; 資料番号: AA0049798000; レポート番号: JAXA-SP-05-036E
• Access Restrictions: 限定公開
• Periodical Title (NCID): AA11984031; https://ci.nii.ac.jp/ncid/AA11984031
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ