Annual report of the semiconductor team in NASDA space utilization research program (1998): Effects of microgravity environments on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Annual report of the semiconductor team in NASDA space utilization research program (1998): Effects of microgravity environments on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Material type: 文書・図像類

Author: 宇宙開発事業団ほか

Publisher: 宇宙開発事業団

Publication date: 1999-09-30

Material Format: Digital

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Note (General)：: 下記の主題について論議した。微小重力、残留加速度、InGaSb、結晶成長、傾斜溶質濃度法、InGaAs、冷却速度、温度勾配、濃度勾配、成長速度、組成的過冷却、残留重力、g-ジッタ、速度変動、温度変動、濃度変動、分岐図、重力変動、濡れ性、表面張力、坩堝、接触角、表面粗度、一方向凝固、熱力学的推進力、格...

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Material Type: 文書・図像類
Title: Annual report of the semiconductor team in NASDA space utilization research program (1998): Effects of microgravity environments on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals
Author/Editor: 宇宙開発事業団
National Space Development Agency
Author Heading: 宇宙開発事業団
National Space Development Agency
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 1999-09-30
Publication Date (W3CDTF): 1999-09-30
Alternative Title: NASDA宇宙利用研究計画(1998)における半導体チームの年次報告:微小重力環境が半導体合金(InGaAs)の成長関連諸性質に与える影響.均質な結晶の成長
Periodical title: 宇宙開発事業団技術報告 = NASDA Technical Memorandum
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 微小重力
残留加速度
InGaSb
結晶成長
傾斜溶質濃度
InGaAs
冷却速度
温度勾配
濃度勾配
成長速度
組成的過冷却
g-ジッタ
重力変動
表面張力
坩堝
microgravity
residual acceleration
crystal growth
graded solute concentration
cooling rate
temperature gradient
concentration gradient
growth rate
constitutional supercooling
g jitter
gravity fluctuation
surface tension
crucible
Target Audience: 一般
Note (General): 下記の主題について論議した。微小重力、残留加速度、InGaSb、結晶成長、傾斜溶質濃度法、InGaAs、冷却速度、温度勾配、濃度勾配、成長速度、組成的過冷却、残留重力、g-ジッタ、速度変動、温度変動、濃度変動、分岐図、重力変動、濡れ性、表面張力、坩堝、接触角、表面粗度、一方向凝固、熱力学的推進力、格子モデル、過剰エンタルピー、InAs-GaAs系、微分格子パラメータ法、熱力学方程式、成分プロフィル、核形成、種結晶、多成分域溶融法、成長界面、凸型界面、固液界面、境界適合座標法、および熱伝導方程式。
The following subjects were discussed: microgravity, residual acceleration, InGaSb, crystal growth, graded solute concentration, InGaAs, cooling rate, temperature gradient, concentration gradient, growth rate, constitutional supercooling, residual gravity, g-jitter, velocity fluctuation, temperature fluctuation, concentration fluctuation, bifurcation diagram, gravity fluctuation, wettability, surface tension, crucible, contact angle, roughness, directional solidification, thermodynamic driving force, lattice model, excess enthalpy, InAs-GaAs system, differential lattice parameter, thermodynamic equation, composition profile, nucleation, seed crystal, multi-component zone melting, growth interface, convex interface, solid-liquid interface, boundary fitted coordinate, and thermal conduction equation.
資料番号: AA0002208000
レポート番号: NASDA-TMR-990006E
Access Restrictions: 限定公開
Periodical Title (NCID): AN00364784
https://ci.nii.ac.jp/ncid/AN00364784
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ