文書・図像類

Preparation of InGaAs starting materials with the gradient InAs concentration

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Preparation of InGaAs starting materials with the gradient InAs concentration

Material type
文書・図像類
Author
橋尾, 克司ほか
Publisher
宇宙開発事業団
Publication date
1999-09-30
Material Format
Digital
Capacity, size, etc.
-
NDC
-
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Notes on use

Note (General)：

成分プロフィルを制御したIn(x)Ga(1-x)As多結晶を調製することを、通常の一方向凝固を用いつつ組成的過冷却を発生させることなく実現することができた。成長界面において40K/cmの高い温度勾配を設けることにより、成長速度を0.62mm/hまで減らした状態で組成的過冷却を抑制することに成功した。...

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Digital

Material Type
文書・図像類
Title
Preparation of InGaAs starting materials with the gradient InAs concentration
Author/Editor
橋尾, 克司
龍見, 雅美
加藤, 浩和
木下, 恭一
Hashio, Katsushi
Tatsumi, Masami
Kato, Hirokazu
Kinoshita, Kyoichi
Author Heading
橋尾, 克司
龍見, 雅美
加藤, 浩和
木下, 恭一
Hashio, Katsushi
Tatsumi, Masami
Kato, Hirokazu
Kinoshita, Kyoichi
Publication, Distribution, etc.
宇宙開発事業団
Publication Date
1999-09-30
Publication Date (W3CDTF)
1999-09-30
Alternative Title
InAs濃度勾配を有するInGaAs原料の調整
Periodical title
宇宙開発事業団技術報告 = NASDA Technical Memorandum
Pages
51-56