Jump to main content
文書・図像類

浮遊帯域溶融法による化合物半導体InSb単結晶の育成

Icons representing 文書・図像類

浮遊帯域溶融法による化合物半導体InSb単結晶の育成

Material type
文書・図像類
Author
中谷, 功ほか
Publisher
宇宙開発事業団
Publication date
1994-10-20
Material Format
Digital
Capacity, size, etc.
-
NDC
-
View All

Notes on use

Note (General):

微小重力下での融液からの結晶成長の特徴を明確にするために、1992年9月スペースシャトルエンデバー号(STS47)に搭載した赤外線イメージ炉を用いてインジウムアンチモン(InSb)の浮遊帯域溶融法結晶成長実験を行った。その結果、直径20mm、長さ100mmのInSb単結晶を作ることに成功した。この実...

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

  • JAXA Repository

    Digital
    You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type
文書・図像類
Author/Editor
中谷, 功
高橋, 總
小澤, 清
西田, 勲夫
Nakatani, Isao
Takahashi, Satoshi
Ozawa, Kiyoshi
Nishida, Isao
Publication, Distribution, etc.
Publication Date
1994-10-20
Publication Date (W3CDTF)
1994-10-20
Alternative Title
Growth of semiconducting compound single crystal InSb by floating zone method
Periodical title
宇宙開発事業団技術報告 = NASDA Technical Memorandum
Pages
499-506