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Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering

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Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering

Material type
文書・図像類
Author
Verma, P.ほか
Publisher
宇宙開発事業団
Publication date
2000-09-29
Material Format
Digital
Capacity, size, etc.
-
NDC
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Notes on use

Note (General):

In(x)Ga(1-x)As基板材料はInGaAsをベースとした光電素子に対して、基板とエピタキシャル成長層の間の格子を可変的に整合させることを可能にする。しかし、組成比が空間的に一様なInGaAs基板結晶を成長させることは極めて難しい。組成比の一様性を制御する上で最も重要な要素の1つは、成長過程の...

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Digital

Material Type
文書・図像類
Author/Editor
Verma, P.
山田, 正良
龍見, 雅美
加藤, 浩和
木下, 恭一
Yamada, Masayoshi
Tatsumi, Masami
Kato, Hirokazu
Kinoshita, Kyoichi
Publication, Distribution, etc.
Publication Date
2000-09-29
Publication Date (W3CDTF)
2000-09-29
Alternative Title
ラマン散乱を使ったIn(x)Ga(1-x)As多結晶の組成比解析
Periodical title
NASDA Technical Memorandum
Pages
77-81