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Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

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Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method

Material type
文書・図像類
Author
花上, 康宏ほか
Publisher
宇宙開発事業団
Publication date
2001-12-25
Material Format
Digital
Capacity, size, etc.
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Notes on use

Note (General)：

Newly invented "Traveling Liquidus-Zone" (TLZ) method was applied to grow In(0.3)Ga(0.7)As single crystals. Homogeneous growth conditions were confirm...

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Digital

Material Type
文書・図像類
Title
Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method
Author/Editor
花上, 康宏
岩井, 正行
鶴, 哲也
村松, 祐治
木下, 恭一
Hanaue, Yasuhiro
Iwai, Masayuki
Tsuru, Tetsuya
Muramatsu, Yuji
Kinoshita, Kyoichi
Author Heading
花上, 康宏
岩井, 正行
鶴, 哲也
村松, 祐治
木下, 恭一
Hanaue, Yasuhiro
Iwai, Masayuki
Tsuru, Tetsuya
Muramatsu, Yuji
Kinoshita, Kyoichi
Publication, Distribution, etc.
宇宙開発事業団
Publication Date
2001-12-25
Publication Date (W3CDTF)
2001-12-25
Alternative Title
移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究
Periodical title
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages
13-17