文書・図像類

Effect of gravity-induced convection on crystal growth process

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Effect of gravity-induced convection on crystal growth process

Material type
文書・図像類
Author
前川, 透ほか
Publisher
宇宙開発事業団
Publication date
2001-12-25
Material Format
Digital
Capacity, size, etc.
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Notes on use

Note (General):

The possibility of growing a uniform InAs-GaAs binary compound semiconductor by the Traveling Liquidus Zone (TLZ) method numerically is investigated. ...

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Digital

Material Type
文書・図像類
Author/Editor
前川, 透
池上, 圭介
田所, 丈季
杉木, 喜洋
松本, 聡
Maekawa, Toru
Ikegami, Keisuke
Tadokoro, Tomoki
Sugiki, Yoshihiro
Matsumoto, Satoshi
Publication, Distribution, etc.
Publication Date
2001-12-25
Publication Date (W3CDTF)
2001-12-25
Alternative Title
結晶成長過程における重力に誘発される対流の影響
Periodical title
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages
41-49