Diffusion constant measurement of oxygen atom in silicon melts

Material type: 文書・図像類

Author: 寺嶋, 一高ほか

Publisher: 宇宙開発事業団

Publication date: 2002-02-28

Material Format: Digital

Capacity, size, etc.: -

NDC: -

View All

Notes on use

Note (General)：: The preliminary studies for measurements of oxygen diffusion constant in silicon melts have been carried out. It has been recognized that the SiO part...

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

List of Cooperating Institutions and Databases

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

JAXA Repository
Digital
You can check the holdings of institutions and databases with which 学術機関リポジトリデータベース（IRDB）（機関リポジトリ） is linked at the site of 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）.
JAXA Repository

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type: 文書・図像類
Title: Diffusion constant measurement of oxygen atom in silicon melts
Author/Editor: 寺嶋, 一高
内田, 美佐子
正木, 匡彦
伊丹, 俊夫
Terashima, Kazutaka
Uchida, Misako
Masaki, Tadahiko
Itami, Toshio
Author Heading: 寺嶋, 一高
内田, 美佐子
正木, 匡彦
伊丹, 俊夫
Terashima, Kazutaka
Uchida, Misako
Masaki, Tadahiko
Itami, Toshio
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2002-02-28
Publication Date (W3CDTF): 2002-02-28
Alternative Title: Siメルトの中での酸素原子の拡散定数の測定
Periodical title: 宇宙開発事業団技術報告 = NASDA Technical Memorandum: Modeling and Precise Experiments of Diffusion Phenomena in Melts Under Microgravity: Annual Report 2000
Pages: 123-126
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 酸素拡散定数
Siメルト
BN
アンプル
濃度
SIMS
炉
研究開発
oxygen diffusion constant
silicon melt
ampoule
concentration
furnace
research and development
Target Audience: 一般
Note (General): The preliminary studies for measurements of oxygen diffusion constant in silicon melts have been carried out. It has been recognized that the SiO partial pressure is much required during experiments to suppress the SiO evaporation from silicon melts.
資料番号: AA0033133013
レポート番号: NASDA-TMR-010019E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42618&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42618&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ