Germanene on Insulators: Towards the realization of a 2D topological insulator

Material type: 文書・図像類

Author: フロランス, アントワーヌ

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Publication date: 2019-06-05

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Note (General)：: 基礎科学分野において，また，様々な応用へ向けて期待が高まるゲルマニウムでできた二次元材料の形成，特に，グラフェン様の蜂の巣格子を持つゲルマネンの形成を主な目的とした．二ホウ化ジルコニウム薄膜上に自発形成される二次元状 Geの構造は二つの三角格子からなり，この構造は電子状態フラットバンドを持つことが明...

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Material Type: 文書・図像類
Title: Germanene on Insulators: Towards the realization of a 2D topological insulator
Author/Editor: フロランス, アントワーヌ
Author Heading: フロランス, アントワーヌ
Publication Date: 2019-06-05
Publication Date (W3CDTF): 2019-06-05
Alternative Title: Germanene on Insulators: Towards the realization of a 2D topological insulator
Periodical title: 科学研究費助成事業研究成果報告書
Pages: 1-6
Text Language Code: eng
Subject Heading: 2D materials
germanium
Target Audience: 一般
Note (General): 基礎科学分野において，また，様々な応用へ向けて期待が高まるゲルマニウムでできた二次元材料の形成，特に，グラフェン様の蜂の巣格子を持つゲルマネンの形成を主な目的とした．二ホウ化ジルコニウム薄膜上に自発形成される二次元状 Geの構造は二つの三角格子からなり，この構造は電子状態フラットバンドを持つことが明らかとなった．また，二ホウ化ジルコニウム薄膜上シリセンにGeを蒸着して二次元SiGe混合層を形成し，バンド幅の制御を実験的に可能にした．その他，ゲルマネンとの格子整合性に優れ，電子状態への影響が少ないことが期待される基板としてInSeに着目し，Ge単結晶上への単結晶配向薄膜の成長に成功した. 研究成果の学術的意義や社会的意義： This project contributed to the development of two-dimensional materials which are of great interest for both applications and fundamental science as they possess novel properties and are solutions to scale down the dimensions of electronics components without increasing the heat dissipation. ： This project was dedicated to the fabrication and the study of two dimensional materials made of germanium and having a high potential for various applications and fundamental science. Its main objective was the realization of germanene, a graphene-like honeycomb lattice. Among the Ge structures we investigated, a single Ge layer spontaneously forming on ZrB2 thin films was identified as a bi-triangular lattice. This Ge structure features a flat band in its band structure from which exotic properties are predicted to emerge. We also demonstrated the feasibility of a band structure engineering in two-dimensional SiGe alloys verified experimentally in the one we fabricated by depositing Ge atoms on silicene on ZrB2. The project also addressed the preparation of ideal substrates for the growth of germanene. Good quality (0001)-oriented InSe thin films were successfully grown on Ge(111), which may allow for the lattice-matching Van der Waals growth of free-standing-like germanene.
若手研究(B)
研究期間：2017～2018
課題番号：17K14116
研究者番号：30628821
研究分野：総合理工
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/16031
Format (IMT): application/pdf
Source: https://dspace.jaist.ac.jp/dspace/bitstream/10119/16031/1/17K14116seika.pdf
https://dspace.jaist.ac.jp/dspace/bitstream/10119/16031/1/17K14116seika.pdf
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北陸先端科学技術大学院大学 : JAIST学術研究成果リポジトリ