新規デバイス応用のための２次元半導体・金属界面の理論的モデリング

Notes on use

Search by Bookstore

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

JAIST Repository
Digital
You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).
JAIST Repository

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 博士論文
Title: 新規デバイス応用のための２次元半導体・金属界面の理論的モデリング
Author/Editor: Abdul, Ghaffar
Author Heading: Abdul, Ghaffar
Publication Date: 2024-03
Publication Date (W3CDTF): 2024-03
Degree grantor/type: 北陸先端科学技術大学院大学
Date Granted: 2024-03-22
Dissertation Number: 甲第1452号
Degree Type: 博士(情報科学)
Text Language Code: eng
Subject Heading: Schottky barrier
ab initio
Phosphorene
WS2
semiconductor-metal interface
Tunnel barrier
metal-induced gap states
Fermi level pinning
Contact resistance
Interface dipole formation
Target Audience: 一般
Note (General): Supervisor: 本郷研太
先端科学技術研究科
博士
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/19062
Format (IMT): application/pdf
Source: fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19062/1/abstract.pdf
fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19062/2/paper.pdf
fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19062/3/summary.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北陸先端科学技術大学院大学 : JAIST学術研究成果リポジトリ