金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御

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Material Type: 博士論文
Title: 金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御
Author/Editor: DENG, YUCHEN
Author Heading: DENG, YUCHEN
Publication Date: 2024-06
Publication Date (W3CDTF): 2024-06
Degree grantor/type: 北陸先端科学技術大学院大学
Date Granted: 2024-06-24
Dissertation Number: 甲第1478号
Degree Type: 博士(マテリアルサイエンス)
Text Language Code: eng
Subject Heading: AlGaN/GaN device
interfacial layer
threshold voltage control
vacuum level step
fixed charge
Target Audience: 一般
Note (General): Supervisor: 鈴木寿一
先端科学技術研究科
博士
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/19335
Format (IMT): application/pdf
Source: comment：fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19335/1/abstract.pdf
comment：fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19335/2/paper.pdf
comment：fulltext
https://dspace.jaist.ac.jp/dspace/bitstream/10119/19335/3/summary.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北陸先端科学技術大学院大学 : JAIST学術研究成果リポジトリ