ナローギャップ半導体Sb2Te3ならびに半金属Sbの電子トンネル分光解析

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Summary, etc.：: In this work tunneling studies on an antimony telluride, V-VI narrow-gap semiconductor (NGS), and an antimony, an element of the compound semiconducto...

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Hokkaido University Collection of Scholarly and Academic Papers
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Material Type: 博士論文
Title: ナローギャップ半導体Sb2Te3ならびに半金属Sbの電子トンネル分光解析
Author/Editor: 八田, 英嗣
Author Heading: 八田, 英嗣
https://nrid.nii.ac.jp/nrid/1000090238022
Publication, Distribution, etc.: Hokkaido University
Publication Date: 1997-09-30
Publication Date (W3CDTF): 1997-09-30
Alternative Title: Electron Tunneling Spectroscopic Analysis of Narrow-Gap Semiconductor Antimony Telluride and Semimetal Antimony
Degree grantor/type: 北海道大学
Date Granted: 1997-09-30
Dissertation Number: 乙第5228号
Degree Type: 博士(工学)
Text Language Code: eng
NDC: 500
Target Audience: 一般
DOI: 10.11501/3130622
Format (IMT): application/pdf
Source: 000000315812.pdf （fulltext）
https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/51454/1/000000315812.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北海道大学 : 北海道大学学術成果コレクション