半導体における電流振動とドメイン不安定性

• Material Type: 博士論文
• Title: 半導体における電流振動とドメイン不安定性
• Author/Editor: 生塩, 研一
• Author Heading: 生塩, 研一
• Alternative Title: Current Oscillations and Domain Instability in Semiconductors
• Degree grantor/type: 広島大学
• Date Granted: 1996-03-26
• Dissertation Number: 甲第1436号
• Degree Type: 博士(理学); Physical Science
• Text Language Code: eng
• Target Audience: 一般
• DOI: 10.11501/3119766
• Format (IMT): application/pdf
• Source: fulltext; http://ir.lib.hiroshima-u.ac.jp/33801/files/30275
• Access Restrictions: インターネット公開
• Rights (production): Copyright(c) by Author
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 広島大学 : 広島大学学術情報リポジトリ

Table of Contents

Abstract / p2
Contents / p4
1 Introduction / p1
　1.1 Negative Differential Conductivity(NDC) / p2
　1.2 Gunn effect / p3
　1.3 Gunn effect with impact ionization / p6
　1.4 Recombination instability / p7
　1.5 Chaos in semiconductors / p8
　1.6 Composition of following chapters / p9
2 Chaotic current oscillations in the Gunn-effect device under the dc and the rf bias voltages / p13
　2.1 Introduction / p13
　2.2 Equations of motion and the method of solution / p14
　2.3 The motion under the dc bias voltage / p18
　2.4 The motion under the dc and rf bias voltage / p20
3 Non-periodic current oscillations in the Gunn-effect device with the impact-ionization effect / p33
　3.1 Introduction / p33
　3.2 Equations of motion and the method of solution / p34
　3.3 Simulational results / p38
4 Current oscillations induced by recombination instability in semiconductors / p49
　4.1 Introduction / p49
　4.2 Equations of motion and simulation method / p49
　4.3 Simulational results / p54
5 Summary and conclusion / p71