高分子材料への電荷注入過程とその評価(I) : 高分子材料のキャリヤトラップ

Material type: 文書・図像類

Author: 小嶋, 憲三

Publisher: 愛知工業大学

Publication date: 1984-03-31

Material Format: Digital

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Note (General)：: 1. Thermally stimulated currents (TSC) from polyethylene terephthalate (PET) electrets formed by high electric fields were investigated. Electrons inj...

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Material Type: 文書・図像類
Title: 高分子材料への電荷注入過程とその評価(I) : 高分子材料のキャリヤトラップ
Author/Editor: 小嶋, 憲三
Author Heading: 小嶋, 憲三
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 1984-03-31
Publication Date (W3CDTF): 1984-03-31
Alternative Title: コウブンシザイリョウエノデンカチュウニュウカテイトソノヒョウカ 1 : コウブンシザイリョウノキャリヤトラップ
Carrier Injection Processes into Polymers and Their Evaluations I : Carrier Traps in Polymers
Periodical title: 愛知工業大学研究報告. B, 専門関係論文集 = Bulletin of Aichi Institute of Technology. Part B
No. or year of volume/issue: 19
Volume: 19
Pages: 15-27
ISSN (Periodical Title): ISSN : 0387-0812
Text Language Code: eng
Target Audience: 一般
Note (General): 1. Thermally stimulated currents (TSC) from polyethylene terephthalate (PET) electrets formed by high electric fields were investigated. Electrons injected from the Al cathode greatly contribute to the TSC above -40℃, the TSC below -40℃ for Al electrodes and at all temperatures for Au electrodes are mainly induced by the depolarization of dipoles. 2. Carrier traps in PET, PEN, PE, PP and PVDF were investigated by TSC and TL analysis in the temperature range from -196 to 100℃. The electron beem with energy of 2&acd;5 keV irradiated specimens to form electrets at -196℃. It was proved that the electron beem technique was useful for the investigation of carrier traps in vinyl polymers with no π electron groups. 3. Electronic carrier traps in PET and PEN were investigated by photoexcitation techniques. A broad peak was observed in temperature range from -160 to 50℃ in PET photoelectrets illuminated at 300 nm at -180℃. Their apparent trap depth was found to distribute from 0.2 to 0.5 eV. On the other hand, two broad peaks were observed in the TSC and TL from PEN photoelectrets illuminated at 360 nm. Their apparent trap depths ranged from 0.1 to 0.5 eV.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/692
Access Restrictions: 限定公開
Periodical Title (NCID): AN00007801
https://ci.nii.ac.jp/ncid/AN00007801
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ