p型Czochralski成長シリコンウェーハのDLTS評価

Material type: 規格・テクニカルリポート類

Author: 加藤, 勇夫ほか

Publisher: 愛知工業大学

Publication date: 1996-03-31

Material Format: Digital

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Note (General)：: 出版タイプ： NAHole traps in boron doped p-type Czochralski-grown (100) silicon wafers have been studied by deep-level transient spectroscopy. Three hole tr...

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Material Type: 規格・テクニカルリポート類
Title: p型Czochralski成長シリコンウェーハのDLTS評価
Author/Editor: 加藤, 勇夫
徳田, 豊
Author Heading: 加藤, 勇夫
徳田, 豊
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 1996-03-31
Publication Date (W3CDTF): 1996
Alternative Title: pガタ Czochralski セイチョウシリコンウェーハノ DLTS ヒョウカ
Deep-level transient spectroscopy studies of p-type Czochralski-grown silicon wafers
Periodical title: 愛知工業大学研究報告. B, 専門関係論文集 = Bulletin of Aichi Institute of Technology. Part B
No. or year of volume/issue: 30
Volume: 30
Pages: 9-13
ISSN (Periodical Title): ISSN : 0387-0812
Target Audience: 一般
Note (General): 出版タイプ： NA
Hole traps in boron doped p-type Czochralski-grown (100) silicon wafers have been studied by deep-level transient spectroscopy. Three hole traps of E_V+0.10eV(H1), E_V+0.42eV(H2) and E_V+0.44eV(H3) are observed. Their concentration is in the range 10^<10>-10^<13> (cm)^<-3>. Trap H2,H3 are annealed out in the temperature range 300℃-350℃. Trap H1 is probably associated iron-boron complex, since its hole thermal emission data coincide with those of iron-boron complex. However, the origins of trap H2,H3 are still unknown.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/984
Access Restrictions: インターネット公開
Periodical Title (NCID): AN00007801
https://ci.nii.ac.jp/ncid/AN00007801
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ