DLTS法によるSiCショットキダイオードの電子トラップの評価

Material type: 文書・図像類

Author: 中嶋, 紘治ほか

Publisher: 愛知工業大学

Publication date: 2005-03-31

Material Format: Digital

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Note (General)：: Electron traps in commercially available SiC Schottky diodes have been characterized by deep level transient spectroscopy (DLTS). Two discrete DLTS pe...

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Material Type: 文書・図像類
Title: DLTS法によるSiCショットキダイオードの電子トラップの評価
Author/Editor: 中嶋, 紘治
徳田, 豊
Author Heading: 中嶋, 紘治
徳田, 豊
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2005-03-31
Publication Date (W3CDTF): 2005-03-31
Alternative Title: DLTS study of electron traps in SiC Schottky diodes
Periodical title: 愛知工業大学研究報告. B, 専門関係論文集 = Bulletin of Aichi Institute of Technology. Part B
No. or year of volume/issue: 40
Volume: 40
Pages: 19-24
ISSN (Periodical Title): ISSN : 0387-0812
Text Language Code: jpn
Target Audience: 一般
Note (General): Electron traps in commercially available SiC Schottky diodes have been characterized by deep level transient spectroscopy (DLTS). Two discrete DLTS peaks corresponding to the energy levels of EC - 0.16 and 0.67 eV are observed in addition to broader signals with deeper energy levels. The EC - 0.16 and 0.67 levels are identified as the Cr impurity and Z1 center, respectively. A 140% increase in concentration for the Z1 center is found by the 2.5 A forward current stress for 1200 min. The broader signals are resolved by isothermal DLTS and are found to consist of five components with the emission activation energies ranging from 0.71 to 0.85 eV. These five components show the filling pulse width dependence in the s range
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1264
Access Restrictions: 限定公開
Periodical Title (NCID): AN00007801
https://ci.nii.ac.jp/ncid/AN00007801
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ