低温堆積AlN,GaN バッファ層/サファイア基板上に作製したMOCVD n-GaN の深い準位の比較

Material type: 文書・図像類

Author: 柴田, 龍成ほか

Publisher: 愛知工業大学

Publication date: 2012-03-31

Material Format: Digital

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Note (General)：: We investigated the variations of trap concentrations in n-GaN films by changing buffer layer type (LT-AlN and GaN) and GaN film thickness. Two e...

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Material Type: 文書・図像類
Title: 低温堆積AlN,GaN バッファ層/サファイア基板上に作製したMOCVD n-GaN の深い準位の比較
Author/Editor: 柴田, 龍成
本田, 銀熙
徳田, 豊
Author Heading: 柴田, 龍成
本田, 銀熙
徳田, 豊
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2012-03-31
Publication Date (W3CDTF): 2012-03-31
Alternative Title: テイオン　タイセキ　AlN　GaN　バッファ　ソウ　サファイア　キバン　ジョウ　ニ　サクセイ　シタ　MOCVD　n-Gan　ノ　フカイ　ジュンイ　ノ　ヒカク
Comparision of deep levels in n-GaN grown by MOCVD on Sapphires with LT-AlN and GaN buffer layers
Periodical title: 愛知工業大学研究報告 = Bulletin of Aichi Institute of Technology
No. or year of volume/issue: 47
Volume: 47
Pages: 165-173
ISSN (Periodical Title): ISSN : 1883-3217
Text Language Code: jpn
Target Audience: 一般
Note (General): We investigated the variations of trap concentrations in n-GaN films by changing buffer layer type (LT-AlN and GaN) and GaN film thickness. Two electron traps labeled E1 (Ec-0.24eV) and E3 (Ec-0.59eV) are observed in all samples by DLTS spectra. The E1 trap shows the logarithmic capture kinetics, which suggests dislocation-related defects. Trap concentration of this trap is lower in the thick GaN film. In addition, the E1 trap concentration in n-GaN film grown on LT-GaN decrease largely as compared to those on LT-AlN buffer layers. On the other hand, no variation in the E2 trap concentration is observed. This result indicates that the E2 trap corresponds to native point defects. Three hole traps labeled H1 (Ev+0.88eV), H1' (Ev+ ~0.4eV) and H2 (Ev+0.26eV) are found by MCTS spectra. The H1 trap is attributed to the C or VGa. Moreover, this trap is the most dominant and shows no variation in all samples. In case of an additional trap H1', the trap concentration has Gaussian distribution of energy levels. This trap obtained in n-GaN on n+-GaN is lower than n-GaN films on Sapphire substrates.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1518
Access Restrictions: 限定公開
Periodical Title (NCID): AA12337561
https://ci.nii.ac.jp/ncid/AA12337561
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ