高ドーズ水素イオン注入シリコンの物性とそのSOI製作への応用

Material type: 文書・図像類

Author: 徳田, 豊ほか

Publisher: 愛知工業大学

Publication date: 1999-06-30

Material Format: Digital

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Note (General)：: Evolutions of hydrogen-implantation-induced defects in silicon with doses have been studied with various kinds of measurement techniques pertinent to ...

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Material Type: 文書・図像類
Title: 高ドーズ水素イオン注入シリコンの物性とそのSOI製作への応用
Author/Editor: 徳田, 豊
高木, 誠
岩田, 博之
大島, 久純
伊藤, 明
Author Heading: 徳田, 豊
高木, 誠
岩田, 博之
大島, 久純
伊藤, 明
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 1999-06-30
Publication Date (W3CDTF): 1999-06-30
Alternative Title: コウドーズ　スイソイオン　チュウニュウ　シリコン　ノ　ブッセイ　ト　ソノ　　SOI　セイサク　エノ　オウヨウ
Properties of Hydrogen-Implanted Silicon with High Doses and Its Application to Fabricate SOI Wafers
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 1
Volume: 1
Pages: 97-107
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): Evolutions of hydrogen-implantation-induced defects in silicon with doses have been studied with various kinds of measurement techniques pertinent to the doses applied. In the low dose range (10^<10> cm^<-2>), the DLTS measurements indicate the change of the defect concentration by below-band-gap light illumination. In the middle range (10^<15> cm^<-2>), carrier concentration and hydrogen depth profile measurements reveal the growth of hydrogen-related shallow donors by annealing at around 300 - 500℃. In the high does range (10^<17> cm^<-2>), TEM observation shows the formation of four kinds of defects, that is, point-like defects, <100> platelets, <111> platelets and dislocation-like loops. It is found that the defect structures change into larger defect complexes probably containing hydrogen atoms with doses. These results are useful to fabricate the SOI wafers by hydrogen implantation.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1572
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ