プロトン注入シリコンの加熱その場観察

Material type: 文書・図像類

Author: 岩田, 博之ほか

Publisher: 愛知工業大学

Publication date: 2001-06-30

Material Format: Digital

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Note (General)：: It is known that silicon wafers implanted at adequate conditions (such as room temperature, 80keV, 5×10^ / 16>H・cm-<-2>) induce exfoliation phenomena ...

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Material Type: 文書・図像類
Title: プロトン注入シリコンの加熱その場観察
Author/Editor: 岩田, 博之
高木, 誠
徳田, 豊
井村, 徹
Author Heading: 岩田, 博之
高木, 誠
徳田, 豊
井村, 徹
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2001-06-30
Publication Date (W3CDTF): 2001-06-30
Alternative Title: プロトン　チュウニュウシリコンノカネツソノバカンサツ
In-situ Heating Experiments of Proton-implanted Silicon
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 3
Volume: 3
Pages: 55-61
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: eng
Target Audience: 一般
Note (General): It is known that silicon wafers implanted at adequate conditions (such as room temperature, 80keV, 5×10^ / 16>H・cm-<-2>) induce exfoliation phenomena after 500℃ heating. However, we found that the samples implanted at -150℃ did not induce exfoliation even at above 500℃ heating. In this study, for making of the influence of implantation temperature clear, the damaged layer in the hydrogen-implanted silicon was observed with cross sectional transmission electron microscopy. The behaviors of three types of specimens (implanted at -150℃, at room temperature and at + 100℃, respectively) were compared by carrying out in-situ heating experiment. In the case of -150℃implantation, the defects-distribution became wider. This wider defects-distribution assists the preservation of much hydrogen gas and this phenomenon impedes the exfoliation by suppressing the growing pressure of hydrogen in the sample implanted at -150℃. In the in-situ heating experiments, the quantities of damages showed a tendency to decrease above 300℃. Although, the damages in the sample implanted at -150℃ vanished by heating of around 750℃, the damages of the sample implanted at room temperature tended to vanish at the heating of above 900℃. The damages of the sample implanted at + 100℃ remained even at above 1100℃ heating. These results showed that the recovery temperature of the damage caused by high-dose hydrogen-implantation had the relation with the implantation temperature.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1601
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ