プロトン剥離現象における不純物依存性

Material type: 文書・図像類

Author: 岩田, 博之ほか

Publisher: 愛知工業大学

Publication date: 2003-01-20

Material Format: Digital

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Note (General)：: Silicon wafers implanted at adequate conditions (such as room temperature, SOkeV, 5 × 10^<16> H-crn^<-2>) induce exfoliation phenomena after 500℃ heat...

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Material Type: 文書・図像類
Title: プロトン剥離現象における不純物依存性
Author/Editor: 岩田, 博之
高木, 誠
徳田, 豊
井村, 徹
Author Heading: 岩田, 博之
高木, 誠
徳田, 豊
井村, 徹
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2003-01-20
Publication Date (W3CDTF): 2003-01-20
Alternative Title: プロトンハクリゲンショウニオケルフジュンブツイゾンセイ
Impurity Dependence of Exfoliation in Proton-implanted Silicon
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 4
Volume: 4
Pages: 55-58
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: eng
Target Audience: 一般
Note (General): Silicon wafers implanted at adequate conditions (such as room temperature, SOkeV, 5 × 10^<16> H-crn^<-2>) induce exfoliation phenomena after 500℃ heating. In this study, for making of the influence of impurity clear, the damaged layer in the hydrogen-implanted silicon was observed with cross sectional transmission electron microscopy. And the exfoliated surface was observed by optical-microscopy and atomic force microscopy (AFM) The behaviors of three types of specimens (p++, p and n type, respectively) were compared by carrying out in furnace annealing. The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peak and a second peak in a shallow region. The number of exfoliation was proportional to the dopant concentration. So was the total exfoliated area (ratio of area). The other hand, the average area of exfoliation was biggest in n type silicon and was in smallest in p++ type. It seems that the average area was not affected by dopant, while it was affected by the depth of exfoliation.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1609
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ