HEM構造を用いた半導体量子ドットレーザの単一モード発振

Material type: 文書・図像類

Author: 五島, 敬史郎ほか

Publisher: 愛知工業大学

Publication date: 2013-03-31

Material Format: Digital

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Note (General)：: We propose a quantum dot (QD) laser with the half-etching mesa distributed feedback (HEM-DFB) structure, fabricated by single-step dry etching. The HE...

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Material Type: 文書・図像類
Title: HEM構造を用いた半導体量子ドットレーザの単一モード発振
Author/Editor: 五島, 敬史郎
津田, 紀生
山田, 諄
小森, 和弘
天野, 健
Author Heading: 五島, 敬史郎
津田, 紀生
山田, 諄
小森, 和弘
天野, 健
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2013-03-31
Publication Date (W3CDTF): 2013-03-31
Alternative Title: ＨＥＭコウゾウオモチイタハンドウタイリョウシドットレーザノタンイツモードハッシン
Single mode laser operation of semiconductor quantum dot using HEM structure.
Periodical title: 愛知工業大学研究報告 = Bulletin of Aichi Institute of Technology
No. or year of volume/issue: 48
Volume: 48
Pages: 191-194
ISSN (Periodical Title): ISSN : 1883-3217
Text Language Code: eng
Target Audience: 一般
Note (General): We propose a quantum dot (QD) laser with the half-etching mesa distributed feedback (HEM-DFB) structure, fabricated by single-step dry etching. The HEM-DFB structure provides several advantages, such as a low scattering loss, wavelength stability and so on. In this study, we achieved wavelength stability control of two mode emission peaks generated by HEM-DFB structure using improved Cl2 dry etching. Also, we demonstrated low threshold current of 23 mA and higher thermal stability of 0.077 nm/K at a 1.3-μm emission by the improved HEM-DFB structure
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/2140
Access Restrictions: 限定公開
Periodical Title (NCID): AA12337561
https://ci.nii.ac.jp/ncid/AA12337561
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ