シリコン単結晶の室温における静的曲げ及び疲労

Material type: 文書・図像類

Author: 高木, 誠ほか

Publisher: 愛知工業大学

Publication date: 2015-09-30

Material Format: Digital

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Note (General)：: The static four-point and three-point bending tests and the fatigue test of the silicon single crystal wafer specimens were carried out at room temper...

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Material Type: 文書・図像類
Title: シリコン単結晶の室温における静的曲げ及び疲労
Author/Editor: 高木, 誠
松室, 昭仁
岩田, 博之
坂, 公恭
Author Heading: 高木, 誠
松室, 昭仁
岩田, 博之
坂, 公恭
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2015-09-30
Publication Date (W3CDTF): 2015-09-30
Alternative Title: シリコンタンケッショウノシツオンニオケルセイテキマゲオヨビヒロウ
Bending and fatigue of silicon single crystal at room temperature
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 17
Volume: 17
Pages: 77-81
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): The static four-point and three-point bending tests and the fatigue test of the silicon single crystal wafer specimens were carried out at room temperature After the tests，the specimens were investigated by the cross-sectional TEM observations in order to clarify the microstructural change. The cross sectional TEM observations indicated that the residual strain was caused in all of the specimens，and the dislocations were also observed after the fatigue tests.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/3061
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ