Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
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- Material Type
- 記事
- Author Heading
- Publication Date
- 2014-10-28
- Publication Date (W3CDTF)
- 2014-10-28
- Periodical title
- JOURNAL OF CRYSTAL GROWTH
- No. or year of volume/issue
- 410
- Volume
- 410
- Pages
- 53-58
- Publication date of volume/issue (W3CDTF)
- 2014-10-28