Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Material type: 文書・図像類

Author: Jiangwei Liuほか

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication date: 2024-01-30

Material Format: Digital

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Material Type: 文書・図像類
Title: Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
Author/Editor: Jiangwei Liu
Tokuyuki Teraji
Bo Da
Yasuo Koide
Author Heading: Jiangwei Liu
https://orcid.org/0000-0003-2580-7401
Tokuyuki Teraji
https://orcid.org/0000-0002-7731-0547
Bo Da
https://orcid.org/0000-0002-0785-8662
Yasuo Koide
https://orcid.org/0000-0001-8321-9822
Publication, Distribution, etc.: Institute of Electrical and Electronics Engineers (IEEE)
Publication Date: 2024-01-30
Publication Date (W3CDTF): 2024-01-30
Periodical title: IEEE Transactions on Electron Devices
No. or year of volume/issue: 71 3
Volume: 71
Issue: 3
Pages: 1764-1768
ISSN (Periodical Title): ISSN : 00189383
Text Language Code: eng
Subject Heading: Boron-doped diamond
Target Audience: 一般
DOI: 10.48505/nims.4442
Format (IMT): application/pdf
Source: cleaned_manuscript.pdf
https://mdr.nims.go.jp/downloads/6d5703225
Access Restrictions: インターネット公開
Rights (production): J. Liu, T. Teraji, B. Da and Y. Koide, "Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1764-1768, March 2024, doi: 10.1109/TED.2024.3356468.
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 物質・材料研究機構 : Materials Data Repository