Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

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学術機関リポジトリデータベース（IRDB）（機関リポジトリ）

Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

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Material Type: 文書・図像類
Title: Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Author/Editor: Ryo Tanaka
Shinya Takashima
Katsunori Ueno
Masahiro Horita
Jun Suda
Jun Uzuhashi
Tadakatsu Ohkubo
Masaharu Edo
Author Heading: Ryo Tanaka
Shinya Takashima
Katsunori Ueno
Masahiro Horita
Jun Suda
Jun Uzuhashi
https://orcid.org/0000-0003-2023-8158
Tadakatsu Ohkubo
https://orcid.org/0000-0003-3548-1951
Masaharu Edo
Publication, Distribution, etc.: IEEE
Publication Date: 2023-07-12
Publication Date (W3CDTF): 2023-07-12
Text Language Code: eng
Subject Heading: gallium nitride
atom probe tomography
transmission electron microscopy
Target Audience: 一般
DOI: 10.48505/nims.4485
Format (IMT): application/pdf
Source: Development_of_p-type_Ion_Implantation_Technique_for_Realization_of_GaN_Vertical_MOSFETs.pdf
https://mdr.nims.go.jp/downloads/dj52wb59j
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 物質・材料研究機構 : Materials Data Repository