Impurity Gettering by Transition Elements in GaAs Growth of Semi-Insulating GaAs Crystals

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Material Type: 博士論文
Title: Impurity Gettering by Transition Elements in GaAs Growth of Semi-Insulating GaAs Crystals
Author/Editor: Ko, Kei-Yu.
Author Heading: Ko, Kei-Yu.
Publication, Distribution, etc.: Cambridge : Massachusetts Institute of Technology
Publication Date: 1988.
Extent: 183 p.
Degree grantor/type: Massachusetts Institute of Technology
Date Granted: 1988.
Date Granted (W3CDTF): 1988
Note (Dissertation): 博士論文
Thesis (doctoral) --Massachusetts Institute of Technology, 1988.
Place of Publication (Country Code): US
Text Language Code: eng
Note (Material Type): [microform]
Note (General): Microfiche.
Note (Bibliography): Includes bibliographies.
Holding library: 国立国会図書館
Call No.: LS-DI-MIT-88-199
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000003377520
http://id.ndl.go.jp/bib/000003377520
Bibliographic Record Category (NDL): 216