Integrated In0.53Ga0.47As/InP Hall Effect Devices for Highly Sensitive Magnetic Field Sensors (ETH Diss. ; Nr. 10420)

Integrated In0.53Ga0.47As/InP Hall Effect Devices for Highly Sensitive Magnetic Field Sensors

(ETH Diss. ; Nr. 10420)

Name of awarding university/degree: Eidgenössische Technische Hochschule Zürich

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Material Type: 博士論文
Title: Integrated In0.53Ga0.47As/InP Hall Effect Devices for Highly Sensitive Magnetic Field Sensors
Author/Editor: Rainer Kyburz.
Series Title: ETH Diss. ; Nr. 10420
Author Heading: Kyburz, Rainer.
Publication, Distribution, etc.: Zürich : Eidgenössische Technische Hochschule Zürich
Publication Date: 1993.
Extent: 2 Microfiches ( 156 fr.) : negative, ill.
Degree grantor/type: Eidgenössische Technische Hochschule Zürich
Date Granted: 1993.
Date Granted (W3CDTF): 1993
Note (Dissertation): 博士論文
Thesis (doctoral) --Eidgenössische Technische Hochschule Zürich, 1993.
Place of Publication (Country Code): CH
Text Language Code: eng
Note (Material Type): [microform]
Note (General): Swiss Federal Institute of Technology.
Note (Bibliography): Includes bibliographies.
Summary in German and English.
Holding library: 国立国会図書館
Call No.: LS-DISE-10420
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000003436850
http://id.ndl.go.jp/bib/000003436850
Bibliographic Record Category (NDL): 216