Monolithically Integrated InGaAs/InP Photodiode-Junction Field-Effect Transistor Receivers for Fiber-Optic Telecommunication (ETH Diss. ; Nr. 11998)

Monolithically Integrated InGaAs/InP Photodiode-Junction Field-Effect Transistor Receivers for Fiber-Optic Telecommunication

(ETH Diss. ; Nr. 11998)

Name of awarding university/degree: Eidgenössische Technische Hochschule Zürich

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Material Type: 博士論文
Title: Monolithically Integrated InGaAs/InP Photodiode-Junction Field-Effect Transistor Receivers for Fiber-Optic Telecommunication
Author/Editor: MARKUS BLASER.
Series Title: ETH Diss. ; Nr. 11998
Author Heading: Blaser, Markus.
Publication, Distribution, etc.: Zürich : Eidgenössische Technische Hochschule Zürich
Publication Date: 1996.
Extent: 3 Microfiches ( 272 fr.) : negative, ill.
Degree grantor/type: Eidgenössische Technische Hochschule Zürich
Date Granted: 1996.
Date Granted (W3CDTF): 1996
Note (Dissertation): 博士論文
Thesis (doctoral) --Eidgenössische Technische Hochschule Zürich, 1996.
Place of Publication (Country Code): CH
Text Language Code: eng
Note (Material Type): [microform]
Note (General): Swiss Federal Institute of Technology.
Note (Bibliography): Includes bibliographies.
Summary in German and English.
Holding library: 国立国会図書館
Call No.: LS-DISE-11998
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000003438224
http://id.ndl.go.jp/bib/000003438224
Bibliographic Record Category (NDL): 216