図書

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) [microform] / Jon C. Freeman (NASA/TM-2003-211983. NASA/TM ; 2003-211983)

Icons representing 図書

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) [microform] / Jon C. Freeman

(NASA/TM-2003-211983. NASA/TM ; 2003-211983)

Call No. (NDL)
YCA-NAS 1.15:2003-211983
Bibliographic ID of National Diet Library
000004260992
Material type
図書
Author
Freeman, Jon Cほか
Publisher
-
Publication date
2003
Material Format
Microform
Capacity, size, etc.
1 microfiche ; 11 × 15 cm
NDC
-
View All

Notes on use

Note (General):

Government document call number: NAS 1.15: 211983Physical description for original version : 1 vShipping list no.: 2003-0339-M...

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Microform

Material Type
図書
Publication Date (W3CDTF)
2003
Extent
1 microfiche
Size
11 × 15 cm
Place of Publication (Country Code)
US
Text Language Code
eng