Advances in Silicon Carbide Chemical Vapor Deposition (CVD) for Semiconductor Device Fabrication NASA-TM-104410 N91-23946 NAS-115104410 E-6237

Advances in Silicon Carbide Chemical Vapor Deposition (CVD) for Semiconductor Device Fabrication

NASA-TM-104410 N91-23946 NAS-115104410 E-6237

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 規格・テクニカルリポート類
Title: Advances in Silicon Carbide Chemical Vapor Deposition (CVD) for Semiconductor Device Fabrication
Author/Editor: Powell, J. A
Petit, J. B
Matus, L. G
Extent: microfiche 8 p
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : NASA-TM-104410
テクニカルリポート番号 : N91-23946
テクニカルリポート番号 : NAS-115104410
テクニカルリポート番号 : E-6237
Holding library: 国立国会図書館
Call No.: LS-N91/23946
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000004973567
http://id.ndl.go.jp/bib/000004973567
Bibliographic Record Category (NDL): 291