Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method SAND-94-2008C DE94 018904 CONF-94101991

Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method

SAND-94-2008C DE94 018904 CONF-94101991

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Material Type: 規格・テクニカルリポート類
Title: Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method
Author/Editor: Dababneh, S. A
Hawkins, C. F
Soden, J. M
Publication Date: 1994
Publication Date (W3CDTF): 1994
Extent: 9 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-94-2008C
テクニカルリポート番号 : DE94 018904
テクニカルリポート番号 : CONF-94101991
Holding library: 国立国会図書館
Call No.: LS-DE94/018904
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005507987
http://id.ndl.go.jp/bib/000005507987
Bibliographic Record Category (NDL): 291