Characterization and control of wafer charging effects during high-current ion implantation LBL-35962 DE95 006587 CONF-94052927

Characterization and control of wafer charging effects during high-current ion implantation

LBL-35962 DE95 006587 CONF-94052927

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Material Type: 規格・テクニカルリポート類
Title: Characterization and control of wafer charging effects during high-current ion implantation
Author/Editor: Current, M. I
Lukaszek, W
Dixon, W
Vella, M. C
Messick, C
Publication Date: 1994
Publication Date (W3CDTF): 1994
Extent: 12 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : LBL-35962
テクニカルリポート番号 : DE95 006587
テクニカルリポート番号 : CONF-94052927
Holding library: 国立国会図書館
Call No.: LS-DE95/006587
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005518139
http://id.ndl.go.jp/bib/000005518139
Bibliographic Record Category (NDL): 291