Self-stressing structures for wafer-level oxide breakdown to 200 MHz SAND-95-0146C DE95 006818 CONF-94103111

Self-stressing structures for wafer-level oxide breakdown to 200 MHz

SAND-95-0146C DE95 006818 CONF-94103111

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Material Type: 規格・テクニカルリポート類
Title: Self-stressing structures for wafer-level oxide breakdown to 200 MHz
Author/Editor: Snyder, E. S
Tanner, D. M
Bowles, M. R
Swanson, S. E
Anderson, C. H
Perry, J. P
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 6 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-95-0146C
テクニカルリポート番号 : DE95 006818
テクニカルリポート番号 : CONF-94103111
Holding library: 国立国会図書館
Call No.: LS-DE95/006818
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005518363
http://id.ndl.go.jp/bib/000005518363
Bibliographic Record Category (NDL): 291