Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation CONF-950820-1 DE95 012885

Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation

CONF-950820-1 DE95 012885

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Material Type: 規格・テクニカルリポート類
Title: Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation
Author/Editor: Lowndes, D. H
Rouleau, C. M
Budai, J. D
Geohegan, D. B
McCamy, J. W
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 3 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : CONF-950820-1
テクニカルリポート番号 : DE95 012885
Holding library: 国立国会図書館
Call No.: LS-DE95/012885
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005523148
http://id.ndl.go.jp/bib/000005523148
Bibliographic Record Category (NDL): 291