Doping and isolation of GaN, InGaN and InAlN using ion implantation SAND-95-1750C DE95 016409 CONF-9509821

Doping and isolation of GaN, InGaN and InAlN using ion implantation

SAND-95-1750C DE95 016409 CONF-9509821

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Material Type: 規格・テクニカルリポート類
Title: Doping and isolation of GaN, InGaN and InAlN using ion implantation
Author/Editor: Pearton, S. J
Vartuli, C. B
Abernathy, C. R
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 6 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-95-1750C
テクニカルリポート番号 : DE95 016409
テクニカルリポート番号 : CONF-9509821
Holding library: 国立国会図書館
Call No.: LS-DE95/016409
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005535745
http://id.ndl.go.jp/bib/000005535745
Bibliographic Record Category (NDL): 291