Atomic scale simulations of arsenic ion implantation and annealing in silicon UCRL-JC-122966 DE96 005390 CONF-95115542

Atomic scale simulations of arsenic ion implantation and annealing in silicon

UCRL-JC-122966 DE96 005390 CONF-95115542

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Material Type: 規格・テクニカルリポート類
Title: Atomic scale simulations of arsenic ion implantation and annealing in silicon
Author/Editor: Caturla, M. J
Diaz de la Rubia, T
Jaraiz, M
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 6 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : UCRL-JC-122966
テクニカルリポート番号 : DE96 005390
テクニカルリポート番号 : CONF-95115542
Holding library: 国立国会図書館
Call No.: LS-DE96/005390
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005559099
http://id.ndl.go.jp/bib/000005559099
Bibliographic Record Category (NDL): 291