Ion implantation doping and high temperature annealing of GaN SAND-95-2843C DE96 003649 CONF-95115585

Ion implantation doping and high temperature annealing of GaN

SAND-95-2843C DE96 003649 CONF-95115585

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Material Type: 規格・テクニカルリポート類
Title: Ion implantation doping and high temperature annealing of GaN
Author/Editor: Zolper, J. C
Crawford, M. H
Howard, A. J
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 6 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-95-2843C
テクニカルリポート番号 : DE96 003649
テクニカルリポート番号 : CONF-95115585
Holding library: 国立国会図書館
Call No.: LS-DE96/003649
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005560398
http://id.ndl.go.jp/bib/000005560398
Bibliographic Record Category (NDL): 291