Synthesis and properties of GaAs nanocrystals in SiO2 formed by ion implantation CONF-951155-99 DE96 008689

Synthesis and properties of GaAs nanocrystals in SiO2 formed by ion implantation

CONF-951155-99 DE96 008689

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Material Type: 規格・テクニカルリポート類
Title: Synthesis and properties of GaAs nanocrystals in SiO2 formed by ion implantation
Author/Editor: Zhu, J. G
White, C. W
Budai, J. D
Withrow, S. P
Wallis, D. J
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : CONF-951155-99
テクニカルリポート番号 : DE96 008689
Holding library: 国立国会図書館
Call No.: LS-DE96/008689
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005775364
http://id.ndl.go.jp/bib/000005775364
Bibliographic Record Category (NDL): 291