Transient phase formation during the growth of epitaxial CoSi2 by annealing of CoTi bi-layers of (100) Si ANL/MSD/CP-87430 DE96 006744 CONF-95115574

Transient phase formation during the growth of epitaxial CoSi2 by annealing of CoTi bi-layers of (100) Si

ANL/MSD/CP-87430 DE96 006744 CONF-95115574

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Material Type: 規格・テクニカルリポート類
Title: Transient phase formation during the growth of epitaxial CoSi2 by annealing of CoTi bi-layers of (100) Si
Author/Editor: Miller, D. J
Selinder, T. I
Gray, K. E
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : ANL/MSD/CP-87430
テクニカルリポート番号 : DE96 006744
テクニカルリポート番号 : CONF-95115574
Holding library: 国立国会図書館
Call No.: LS-DE96/006744
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005775709
http://id.ndl.go.jp/bib/000005775709
Bibliographic Record Category (NDL): 291