Direct observation and measurements of neutron induced deep levels responsible for N(eff) changes in high resistivity silicon detectors using TCT BNL-62981 DE96 009256 CONF-96031562

Direct observation and measurements of neutron induced deep levels responsible for N(eff) changes in high resistivity silicon detectors using TCT

BNL-62981 DE96 009256 CONF-96031562

Call No. (NDL): LS-DE96/009256
Bibliographic ID of National Diet Library: 000005776607

Material type: 規格・テクニカルリポート類

Author: Li, Zほか

Publisher: -

Publication date: 1996

Material Format: Microform

Capacity, size, etc.: 24 p. (1 microfiche)

NDC: -

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Microform

Material Type: 規格・テクニカルリポート類
Title: Direct observation and measurements of neutron induced deep levels responsible for N(eff) changes in high resistivity silicon detectors using TCT
Author/Editor: Li, Z
Li, C. J
Eremin, V
Verbitskaya, E
Publication Date: 1996
Publication Date (W3CDTF): 1996
Extent: 24 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : BNL-62981
テクニカルリポート番号 : DE96 009256
テクニカルリポート番号 : CONF-96031562
Holding library: 国立国会図書館
Call No.: LS-DE96/009256
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005776607
http://id.ndl.go.jp/bib/000005776607
Bibliographic Record Category (NDL): 291