Parametric study of compound semiconductor etching utilizing inductively coupled plasma source SAND-96-1728C DE96 012938 CONF-96040164

Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

SAND-96-1728C DE96 012938 CONF-96040164

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Material Type: 規格・テクニカルリポート類
Title: Parametric study of compound semiconductor etching utilizing inductively coupled plasma source
Author/Editor: Constantine, C
Johnson, D
Barratt, C
Publication Date: 1996
Publication Date (W3CDTF): 1996
Extent: 14 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-96-1728C
テクニカルリポート番号 : DE96 012938
テクニカルリポート番号 : CONF-96040164
Holding library: 国立国会図書館
Call No.: LS-DE96/012938
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005857387
http://id.ndl.go.jp/bib/000005857387
Bibliographic Record Category (NDL): 291