Interfacial arsenic from wet oxidation of Al(sub x)Ga(sub 1-X)As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication SAND-97-0152C DE97 002459 CONF-96120221

Interfacial arsenic from wet oxidation of Al(sub x)Ga(sub 1-X)As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication

SAND-97-0152C DE97 002459 CONF-96120221

Call No. (NDL): LS-DE97/002459
Bibliographic ID of National Diet Library: 000005865736

Material type: 規格・テクニカルリポート類

Author: Ashby, C. I. Hほか

Publisher: -

Publication date: 1996

Material Format: Microform

Capacity, size, etc.: 7 p. (1 microfiche)

NDC: -

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Microform

Material Type: 規格・テクニカルリポート類
Title: Interfacial arsenic from wet oxidation of Al(sub x)Ga(sub 1-X)As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication
Author/Editor: Ashby, C. I. H
Sullivan, J. P
Newcomer, P. P
Publication Date: 1996
Publication Date (W3CDTF): 1996
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-97-0152C
テクニカルリポート番号 : DE97 002459
テクニカルリポート番号 : CONF-96120221
Holding library: 国立国会図書館
Call No.: LS-DE97/002459
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005865736
http://id.ndl.go.jp/bib/000005865736
Bibliographic Record Category (NDL): 291