Electron induced depassivation of H and D terminated Si/SiO(sub 2) interfaces SAND-97-0221C DE97 000673 CONF-96120252

Electron induced depassivation of H and D terminated Si/SiO(sub 2) interfaces

SAND-97-0221C DE97 000673 CONF-96120252

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Material Type: 規格・テクニカルリポート類
Title: Electron induced depassivation of H and D terminated Si/SiO(sub 2) interfaces
Author/Editor: Devine, R. A. B
Mourrain, C
Bouzid, M. J
Warren, W. L
Vanheusden, K
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 8 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-97-0221C
テクニカルリポート番号 : DE97 000673
テクニカルリポート番号 : CONF-96120252
Holding library: 国立国会図書館
Call No.: LS-DE97/000673
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005866919
http://id.ndl.go.jp/bib/000005866919
Bibliographic Record Category (NDL): 291